4.6 Article

Single substitutional nitrogen defects revealed as electron acceptor states in diamond using ultrafast spectroscopy

Related references

Note: Only part of the references are listed.
Article Optics

Terahertz spectroscopy and imaging - Modern techniques and applications

Peter Uhd Jepsen et al.

LASER & PHOTONICS REVIEWS (2011)

Article Physics, Multidisciplinary

Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy

Ronald Ulbricht et al.

REVIEWS OF MODERN PHYSICS (2011)

Article Materials Science, Multidisciplinary

Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light-induced transient grating technique

T. Malinauskas et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)

Article Physics, Applied

Generation and transport of photoexcited electrons in single-crystal diamond

F. J. Heremans et al.

APPLIED PHYSICS LETTERS (2009)

Review Optics

Prospects for measurement-based quantum computing with solid state spins

Simon C. Benjamin et al.

LASER & PHOTONICS REVIEWS (2009)

Article Materials Science, Multidisciplinary

Acceptor level of nitrogen in diamond and the 270-nm absorption band

R. Jones et al.

PHYSICAL REVIEW B (2009)

Article Computer Science, Interdisciplinary Applications

Rapid iterative method for electronic-structure eigenproblems using localised basis functions

M. J. Rayson et al.

COMPUTER PHYSICS COMMUNICATIONS (2008)

Article Materials Science, Multidisciplinary

Optical evaluation of carrier lifetime and diffusion length in synthetic diamonds

T. Malinauskas et al.

DIAMOND AND RELATED MATERIALS (2008)

Review Materials Science, Multidisciplinary

Diamond as an electronic material

Chris J. H. Wort et al.

MATERIALS TODAY (2008)

Article Materials Science, Multidisciplinary

Time of flight study of high performance CVD diamond detector devices

N. Tranchant et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2007)

Article Physics, Applied

Hall mobility and scattering mechanism of holes in boron-doped homoepitaxial chemical vapor deposition diamond thin films

Kunio Tsukioka et al.

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2006)

Review Materials Science, Multidisciplinary

n-type doping of diamond

Satoshi Koizumi et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2006)

Review Materials Science, Multidisciplinary

Single defect centres in diamond: A review

F. Jelezko et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2006)

Article Materials Science, Multidisciplinary

Donor and acceptor states in diamond

JP Goss et al.

DIAMOND AND RELATED MATERIALS (2004)

Article Materials Science, Multidisciplinary

Electrical properties of B-related acceptor in B-doped homoepitaxial diamond layers grown by microwave plasma CVD

M Suzuki et al.

DIAMOND AND RELATED MATERIALS (2004)

Article Multidisciplinary Sciences

High carrier mobility in single-crystal plasma-deposited diamond

J Isberg et al.

SCIENCE (2002)

Article Materials Science, Multidisciplinary

Stress tensors and dilatation of interstitial defects in diamond

JP Goss et al.

PHYSICAL REVIEW B (2002)

Article Materials Science, Multidisciplinary

Defects in coloured natural diamonds

F De Weerdt et al.

DIAMOND AND RELATED MATERIALS (2001)

Article Materials Science, Multidisciplinary

Slater transition-state band-structure calculations

DA Liberman

PHYSICAL REVIEW B (2000)