Journal
PHYSICAL REVIEW B
Volume 84, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.125450
Keywords
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Funding
- NSF
- ECCS
- SRC NRI MIND center
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0846910, 1530723, 0802125] Funding Source: National Science Foundation
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Transport of carriers in two-dimensional graphene at high electric fields is investigated by combining semianalytical and Monte Carlo methods. A semianalytical high-field transport model based on the high rate of optical phonon emission provides useful estimates of the saturation currents in graphene. For developing a more accurate picture, the nonequilibrium (hot) phonon effect and the role of electron-electron scattering were studied using Monte Carlo simulations. Monte Carlo simulations indicate that the hot phonon effect plays a dominant role in current saturation, and electron-electron scattering strongly thermalizes the hot carrier population in graphene. We also find that electron-electron scattering removes negative differential resistance in graphene. Transient phenomenon such as velocity overshoot can be used to speed up graphene-based high-speed electronic devices by shrinking the channel length below 80 nm if electrostatic control can be exercised in the absence of a band gap.
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