Spin transport properties in silicon in a nonlocal geometry

A systematic investigation of spin transport properties in silicon at 8 K by using a nonlocal geometry is presented. The spin injection signal in the nonlocal scheme is found to increase in proportion to the evolution of bias electric currents. Theoretical fittings using the Hanle-type spin precession signals reveal that the spin polarization of the transported spins in the Si is much less affected by the change in the bias electric current compared with the cases in the other spin devices. It is also revealed that the bias current dependence of the spin accumulation voltages exhibits good accordance with that of the spin polarization.