Journal
PHYSICAL REVIEW B
Volume 83, Issue 13, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.83.134408
Keywords
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Funding
- NSF of China [50832003, 50921061]
- National Basic Research Program of China [2009CB623303]
- NSF [DMR-1006541]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1006541] Funding Source: National Science Foundation
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We present a phenomenological scheme to study the size-dependent electric voltage-controlled magnetic anisotropy in ferromagnetic (FM) and ferroelectric (FE) heterostructures. The FM layers are either metallic [Fe(001), Ni(001), Co(0001)] or half-metallic [(La, Sr)MnO3] films. Two magnetoelectric mechanisms, i.e., interface-charge and strain-mediated couplings, are considered. We show that the interface-charge-mediated coupling is the main mechanism for the magnetoelectic coupling when the FM film thickness is below a certain transition thickness d(tr) while the strain-mediated coupling dominates above d(tr).
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