Journal
PHYSICAL REVIEW B
Volume 83, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.83.115110
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Funding
- US Department of Energy, Basic Energy Sciences, through the S3TEC Energy Frontier Research Center
- Institute of High Performance Computing (IHPC)
- Agency of Science, Technology, and Research (A*STAR)
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We report an investigation of the temperature- and doping-dependent thermoelectric behavior of n-type ZnO. The results are based on a combination of experimental data from the literature and calculated transport functions obtained from Boltzmann transport theory applied to the first-principles electronic structure. From this we obtain the dependence of the figure of merit ZT on doping and temperature. We find that improvement of the lattice thermal conductivity is essential for obtaining high ZT in n-type ZnO.
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