Journal
PHYSICAL REVIEW B
Volume 84, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.085315
Keywords
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Funding
- DOE-BES [DE-SC0004890]
- US ONR [N0000140610123]
- AFOSR-DCT [FA9550-09-1-0493]
- NSF-ECCS [CAREER 054782]
- Brazil CNPq
- FAPEMIG
- [NSF-ECCS 102092]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1102092] Funding Source: National Science Foundation
- U.S. Department of Energy (DOE) [DE-SC0004890] Funding Source: U.S. Department of Energy (DOE)
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We use Monte Carlo simulations to analyze electric-field control of Curie temperature T-C for carrier-mediated ferromagnetism in semiconductors. Gating employed to achieve electrostatic doping in an optimized geometry of (Ga, Mn)As, a prototypical ferromagnetic semiconductor, reveals a highly tunable ferromagnetic order. We show the feasibility of Delta T-C > 100 K, an order of magnitude greater then the state-of-the-art measurements, at fields substantially smaller then the breakdown values. Such controllable ferromagnetism may help elucidate the mechanism of carrier-mediated magnetism in various semiconductors and offer versatile spintronic applications.
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