Related references
Note: Only part of the references are listed.Charge carrier trapping at passivated silicon surfaces
Johannes Seiffe et al.
JOURNAL OF APPLIED PHYSICS (2011)
Development status of high-efficiency HIT solar cells
Takahiro Mishima et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2011)
The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality
A. Descoeudres et al.
APPLIED PHYSICS LETTERS (2010)
Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions
T. F. Schulze et al.
APPLIED PHYSICS LETTERS (2010)
Nature of doped a-Si:H/c-Si interface recombination
Stefaan De Wolf et al.
JOURNAL OF APPLIED PHYSICS (2009)
Stretched-exponential a-Si:H/c-Si interface recombination decay
Stefaan De Wolf et al.
APPLIED PHYSICS LETTERS (2008)
Staebler-Wronski-like formation of defects at the amorphous-silicon-crystalline silicon interface during illumination
Heiko Plagwitz et al.
JOURNAL OF APPLIED PHYSICS (2008)
Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation
J. J. H. Gielis et al.
JOURNAL OF APPLIED PHYSICS (2008)
Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment
A. H. M. Smets et al.
PHYSICAL REVIEW B (2007)
Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
Sara Olibet et al.
PHYSICAL REVIEW B (2007)
Abruptness of a-Si:H/c-Si interface revealed by carrier lifetime measurements
Stefaan De Wolf et al.
APPLIED PHYSICS LETTERS (2007)
Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
G. Agostinelli et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2006)
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
B. Hoex et al.
APPLIED PHYSICS LETTERS (2006)
Real-time monitoring and process control in amorphous/crystalline silicon heterojunction solar cells by spectroscopic ellipsometry and infrared spectroscopy
H Fujiwara et al.
APPLIED PHYSICS LETTERS (2005)
Interaction of hydrogen-terminated Si(100), (110), and (111) surfaces with hydrogen plasma investigated by in situ real-time infrared absorption spectroscopy
M Shinohara et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2003)
Impact of moisture on charge trapping and flatband voltage in Al2O3 gate dielectric films
S Zafar et al.
APPLIED PHYSICS LETTERS (2002)
Direct role of hydrogen in the Staebler-Wronski effect in hydrogenated amorphous silicon
T Su et al.
PHYSICAL REVIEW LETTERS (2002)
Share Paper
