Journal
PHYSICAL REVIEW B
Volume 84, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.085301
Keywords
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Funding
- DOE-BES
- DMSE at SLAC [DE-AC02-76SF00515]
- NSF NSEC [0425897]
- Gordon and Betty Moore Foundation
- National Science Foundation
- NSF
- Hertz Foundation
- Stanford
- David and Lucile Packard Foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [819860] Funding Source: National Science Foundation
- Division Of Physics
- Direct For Mathematical & Physical Scien [830228, 0425897] Funding Source: National Science Foundation
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We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly depleting one layer will extend its wave function to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.
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