Journal
PHYSICAL REVIEW B
Volume 83, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.83.155118
Keywords
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Funding
- NIMS
- MEXT
- Japan Society for the Promotion of Science (JSPS) [20001004, 22246083]
- Grants-in-Aid for Scientific Research [22246083, 22560676, 22245023] Funding Source: KAKEN
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A layered iridate Ba2IrO4 was synthesized using a high-pressure synthesis technique. Its electronic state was studied through electrical resistivity, magnetic susceptibility, and mu SR experiments. It was found that Ba2IrO4 crystallizes in a K2NiF4-type structure (space group I4/mmm) with lattice parameters a = 4.030(1) angstrom and c = 13.333(4) angstrom. The structure includes flat IrO2 square planar lattices with straight Ir-O-Ir bonds. Ba2IrO4 is a Mott insulator (activation energy Delta E-a similar to 0.07 eV) driven by a spin-orbit interaction. The magnetic susceptibility and mu SR studies revealed that the magnetic ground state is antiferromagnetic long-range order (T-N similar to 240 K) in which the magnetic moment (similar to 0.34 mu(B)/Ir atom) is significantly reduced by a low-dimensional quantum spin fluctuation with a large intraplane correlation vertical bar J vertical bar. The behavior is similar to that in parent materials of high-T-C cuprate superconductors such as La2CuO4.
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