Journal
PHYSICAL REVIEW B
Volume 84, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.035304
Keywords
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Funding
- National Science Foundation [NSF-0702295]
- BISH Program [CBET-0933015]
- Harvard NSF Nanoscale Science and Engineering Center
- Samsung
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [0933015] Funding Source: National Science Foundation
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We investigate the low-field relaxation of nuclear hyperpolarization in undoped and highly doped silicon microparticles at room temperature following removal from high field. For nominally undoped particles, two relaxation time scales are identified for ambient fields above 0.2 mT. The slower, T-1,T-s, is roughly independent of ambient field; the faster, T-1,T-f, decreases with increasing ambient field. A model in which nuclear spin relaxation occurs at the particle surface via a two-electron mechanism is shown to be in good agreement with the experimental data, particularly the field independence of T-1,T-s. For boron-doped particles, a single relaxation time scale is observed. This suggests that for doped particles, mobile carriers and bulk ionized acceptor sites, rather than paramagnetic surface states, are the dominant relaxation mechanisms. Relaxation times for the undoped particles are not affected by tumbling in a liquid solution.
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