Journal
PHYSICAL REVIEW B
Volume 84, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.045437
Keywords
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Funding
- National Science Foundation
- DARPA
- Air Force Office of Scientific Research
- Office of Naval Research
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0824209] Funding Source: National Science Foundation
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Electron-hole generation and recombination rates for plasmon emission and absorption in graphene are presented. The recombination times of carriers due to plasmon emission are found to be in the tens of femtoseconds to hundreds of picoseconds range. The recombination times depend sensitively on the carrier energy, carrier density, temperature, and plasmon dispersion. Carriers near the Dirac point are found to have much longer lifetimes compared to carriers at higher energies. Plasmons in a graphene layer on a polar substrate hybridize with the surface optical phonons and this hybridization modifies the plasmon dispersion. We also present generation and recombination rates of carriers due to plasmon emission and absorption in graphene layers on polar substrates.
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