4.6 Article

Stacking-order dependent transport properties of trilayer graphene

Journal

PHYSICAL REVIEW B
Volume 84, Issue 16, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.161408

Keywords

-

Funding

  1. Deutsche Forschungsgemeinschaft [GRK 1570]
  2. EU [228043]
  3. EPSRC [EP/G036101/1, EP/J000396/1]
  4. Royal Society [2010/R2, SH-05052]
  5. ERATO-JST [080300000477]
  6. Special Coordination Funds for Promoting Science and Technology (NanoQuine)
  7. JST Strategic International Cooperative Program
  8. MEXT [21102003]
  9. [20684011]
  10. EPSRC [EP/J000396/1] Funding Source: UKRI
  11. Engineering and Physical Sciences Research Council [EP/J000396/1] Funding Source: researchfish
  12. Grants-in-Aid for Scientific Research [23684019] Funding Source: KAKEN

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We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of v = 2,4,6, ... with a step of Delta v = 2, whereas the inversion-symmetric ABC trilayer exhibits plateaus at v = 6 and 10 with fourfold spin and valley degeneracy.

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