4.6 Article

Spin-current generation from Coulomb-Rashba interaction in semiconductor bilayers

Journal

PHYSICAL REVIEW B
Volume 84, Issue 3, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.033305

Keywords

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Funding

  1. RFBR
  2. EU [PIIF-GA-2009-235394]
  3. Dynasty Foundation-ICFPM
  4. DFG [SFB 689]
  5. Belgium Science Policy (IAP)
  6. NSF [DMR-0705460]

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Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction that arises in each layer from the perpendicular component of the Coulomb electric field created by electron-density fluctuations in the other layer. We show that this interaction, acting in combination with the usual spin-orbit interaction, can generate a spin current in one layer when a charge current is driven in the other. This effect is distinct symmetrywise from the spin-Hall drag. The spin current is not, in general, perpendicular to the drive current.

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