Journal
PHYSICAL REVIEW B
Volume 84, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.081203
Keywords
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Funding
- Office of Naval Research
- National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0801388] Funding Source: National Science Foundation
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We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or nonmagnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga1-xMnxAs, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be-doped samples, however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.
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