Journal
PHYSICAL REVIEW B
Volume 84, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.075316
Keywords
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Funding
- JSPS [19674002]
- MEXT [22103004]
- AFOSR [AOARD 10-4103]
- Grants-in-Aid for Scientific Research [19674002, 22103004] Funding Source: KAKEN
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We present a defect-engineering strategy to optimize the transport properties of the topological insulator Bi2Se3 to show a high bulk resistivity and clear quantum oscillations. Starting with a p-type Bi2Se3 obtained by combining Cd doping and a Se-rich crystal-growth condition, we were able to observe a p-to-n-type conversion upon gradually increasing the Se vacancies by post annealing. With the optimal annealing condition, where a high level of compensation is achieved, the resistivity exceeds 0.5 Omega cm at 1.8 K and we observed two-dimensional Shubnikov-de Haas oscillations composed of multiple frequencies in magnetic fields below 14 T.
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