Journal
PHYSICAL REVIEW B
Volume 83, Issue 16, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.83.161202
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Funding
- EPSRC [EP/F067496, GR/S94148]
- Oxford Clarendon Fund
- Engineering and Physical Sciences Research Council [EP/F067496/1] Funding Source: researchfish
- EPSRC [EP/F067496/1] Funding Source: UKRI
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We demonstrate that metal oxides exhibit the same relationship between lattice strain and electronic band gap as nonpolar semiconductors. Epitaxial growth of ultrathin [111]-oriented single-crystal indium-oxide films on a mismatched Y-stabilized zirconia substrate reveals a net band-gap decrease, which is dissipated as the film thickness is increased and the epitaxial strain is relieved. Calculation of the band-gap deformation of In2O3, using a hybrid density functional, confirms that, while the uniaxial lattice contraction along [111] results in a band-gap increase due to a raise of the conduction band, the lattice expansion in the (111) plane caused by the substrate mismatch compensates, resulting in a net band-gap decrease. These results have direct implications for tuning the band gaps and transport properties of oxides for application in optoelectronic devices.
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