Journal
PHYSICAL REVIEW B
Volume 81, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.075303
Keywords
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Funding
- DOE [DE-FG02-08ER46532]
- NSF [DMR-0618235, DMR-0520550]
- U.S. Department of Energy (DOE) [DE-FG02-08ER46532] Funding Source: U.S. Department of Energy (DOE)
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The magnetoresistance at temperatures below 20 K in an n-InSb/In(0.85)Al(0.15)Sb two-dimensional electron system is studied and described in terms of antilocalization due to quantum interference under strong spin-orbit interaction. The spin-orbit interaction coefficients are extracted by fitting the magnetoresistance data to an antilocalization theory distinguishing the Rashba and Dresselhaus contributions. A good agreement between magnetoresistance data and theory suggests a Rashba coefficient vertical bar alpha vertical bar approximate to 0.03 eV angstrom and a Dresselhaus coefficient gamma approximate to 490 eV angstrom(3). A strong contribution from the Dresselhaus term leads to pronounced anisotropy in the energy splitting induced by spin-orbit interaction in the two-dimensional electron dispersion.
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