Journal
PHYSICAL REVIEW B
Volume 81, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.115409
Keywords
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Funding
- Center for Probing the Nanoscale
- NSF Nanoscale Science and Engineering Center [PHY-0830228]
- NSF [ECS-9731293]
- NRI
- Focus Center Research Program's Center on Functional Engineered Nano Architectonics (FENA)
- Stanford Vice Provost for Undergraduate Education
- Intel and Hertz Foundations
- Stanford under the Hellman Faculty Scholar program
- Direct For Mathematical & Physical Scien
- Division Of Physics [GRANTS:13675314, 0830228] Funding Source: National Science Foundation
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We study the transport properties of graphene nanoribbons of standardized 30 nm width and varying lengths. We find that the extent of the gap observed in transport as a function of Fermi energy in these ribbons (the transport gap) does not have a strong dependence on ribbon length, while the extent of the gap as a function of source-drain voltage (the source-drain gap) increases with increasing ribbon length. We anneal the ribbons to reduce the amplitude of the disorder potential and find that the transport gap both shrinks and moves closer to zero gate voltage. In contrast, annealing does not systematically affect the source-drain gap. We conclude that the transport gap reflects the overall strength of the background disorder potential, while the source-drain gap is sensitively dependent on its details. Our results support the model that transport in graphene nanoribbons occurs through quantum dots forming along the ribbon due to a disorder potential induced by charged impurities.
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