Journal
PHYSICAL REVIEW B
Volume 81, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.153401
Keywords
-
Funding
- Academy of Finland through several projects and the Centre of Excellence program
Ask authors/readers for more resources
Using atomistic computer simulations based on analytical potential and density-functional theory models, we study effects of ion irradiation on graphene. We identify the types and concentrations of defects which appear in graphene under impacts of various ions with energies ranging from tens of electron volts to mega-electron volts. For two-dimensional targets, defects beyond single and double vacancies are formed via in-plane recoils. We demonstrate that the conventional approach based on binary-collision approximation and stochastic algorithms developed for bulk solids cannot be applied to graphene and other low-dimensional systems. Finally, taking into account the gas-holding capacity of graphene, we suggest the use of graphene as the ultimate membrane for ion-beam analysis of gases and other volatile systems which cannot be put in the high vacuum required for the operation of ion beams.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available