Journal
PHYSICAL REVIEW B
Volume 82, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.115306
Keywords
-
Funding
- German Federal Ministry of Education and Research (BMBF) [13N9867, 03SF0334F]
- Bavarian Academy of Science and Humanities
- Bavarian Ministry of Economic Affairs, Infrastructure, Transport and Technology
Ask authors/readers for more resources
Measuring the current-voltage characteristic of organic bulk heterojunction solar devices sometimes reveals an S-shaped deformation. We qualitatively produce this behavior by a numerical device simulation assuming a reduced surface recombination. Furthermore we show how to experimentally create these double diodes by applying an oxygen plasma etch on the indium-tin-oxide anode. Restricted charge transport over material interfaces accumulates space charges and therefore creates S-shaped deformations. Finally we discuss the consequences of our findings for the open-circuit voltage V-oc.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available