Journal
PHYSICAL REVIEW B
Volume 81, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.115101
Keywords
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Funding
- CONICET [PIP 5254/05, PIP 112-200801-00047, 00930]
- ANCTyP [PICT 483/06, PICT 837/07]
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We introduce a model that accounts for the bipolar resistive switching phenomenon observed in transition-metal oxides. It qualitatively describes the electric-field-enhanced migration of oxygen vacancies at the nanoscale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces leading to spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce nontrivial resistance hysteresis experiments that we also report providing key validation to our model.
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