Related references
Note: Only part of the references are listed.Detailed microscopic analysis of self-interstitial aggregation in silicon. II. Thermodynamic analysis of single clusters
Sumeet S. Kapur et al.
PHYSICAL REVIEW B (2010)
Strain evolution in Si substrate due to implantation of MeV ion observed by extremely asymmetric x-ray diffraction
T. Emoto et al.
JOURNAL OF APPLIED PHYSICS (2009)
Biaxial strain effects on the structure and stability of self-interstitial clusters in silicon
Robert J. Bondi et al.
PHYSICAL REVIEW B (2009)
Structure and stability of small compact self-interstitial clusters in crystalline silicon
Sangheon Lee et al.
PHYSICAL REVIEW B (2008)
A bottom-up multiscale view of point-defect aggregation in silicon
Talid Sinno
JOURNAL OF CRYSTAL GROWTH (2007)
Transformation of {113} defects into dislocation loops mediated by the {111} rod-like defects
S. Boninelli et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2006)
Vacancy self-trapping during rapid thermal annealing of silicon wafers
Thomas A. Frewen et al.
APPLIED PHYSICS LETTERS (2006)
Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops
S. Boninelli et al.
APPLIED PHYSICS LETTERS (2006)
Role of configurational entropy in the thermodynamics of clusters of point defects in crystalline solids
SS Kapur et al.
PHYSICAL REVIEW B (2005)
A microscopically accurate continuum model for void formation during semiconductor silicon processing
TA Frewen et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Carbon-mediated aggregation of self-interstitials in silicon: A large-scale molecular dynamics study
SS Kapur et al.
PHYSICAL REVIEW B (2004)
Ion beam induced defects in crystalline silicon
F Cristiano et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2004)
Electrical and optical properties of rod-like defects in silicon
JP Goss et al.
APPLIED PHYSICS LETTERS (2004)
Internally consistent approach for modeling solid-state aggregation. I. Atomistic calculations of vacancy clustering in silicon
M Prasad et al.
PHYSICAL REVIEW B (2003)
Internally consistent approach for modeling solid-state aggregation. II. Mean-field representation of atomistic processes
M Prasad et al.
PHYSICAL REVIEW B (2003)
Extended defects in shallow implants
A Claverie et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2003)
Global parameterization of multiple point-defect dynamics models in silicon
RA Frewen et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2003)
Planar interstitial aggregates in Si
JP Goss et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
Atomistic-to-continuum description of vacancy cluster properties in crystalline silicon
M Prasad et al.
APPLIED PHYSICS LETTERS (2002)
Modeling of the Ostwald ripening of extrinsic defects and transient enhanced diffusion in silicon
A Claverie et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2002)
Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon
B Colombeau et al.
APPLIED PHYSICS LETTERS (2001)
Identification of the tetra-interstitial in silicon
BJ Coomer et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2001)
Accelerated dynamics simulations of interstitial-cluster growth
S Birner et al.
SOLID STATE COMMUNICATIONS (2001)
Defect engineering of Czochralski single-crystal silicon
T Sinno et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2000)
Evolution of energetics and bonding of compact self-interstitial clusters in Si
A Bongiorno et al.
EUROPHYSICS LETTERS (2000)
The displacement, and strain-stress fields of a general circular Volterra dislocation loop
TA Khraishi et al.
INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE (2000)
Stability of Si-interstitial defects: From point to extended defects
J Kim et al.
PHYSICAL REVIEW LETTERS (2000)
Share Paper
