Temperature dependence of GaAs random laser characteristics

We show the temperature-dependent random lasing characteristics of photoexcited GaAs powders from 30 to 300 K. The lasing properties strongly depend on the temperature, i.e., the lasing peak energy increases and the threshold excitation power decreases as the temperature decreases. A theoretical model, in which the gain spectra of heavily doped n-GaAs are taken into consideration, well describes the temperature dependence of the lasing peak energy. The temperature dependence of the threshold excitation power can be also explained by the model qualitatively.