Journal
PHYSICAL REVIEW B
Volume 82, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.075419
Keywords
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Funding
- Japan Society for Promotion of Science
- Japan Science and Technology Agency, CREST, Japan
- Office Of The Director
- Office Of Internatl Science &Engineering [0968405] Funding Source: National Science Foundation
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The Fermi energies of electrons and holes and their densities in different graphene layers (GLs) in the n and p regions of the electrically induced n-i-p junctions formed in multiple-GL structures are calculated both numerically and using a simplified analytical model. The reverse current associated with the injection of minority carriers through the n and p regions in the electrically induced n-i-p junctions under the reverse bias is calculated as well. It is shown that in the electrically induced n-i-p junctions with moderate numbers of GLs the reverse current can be substantially suppressed. Hence, multiple-GL structures with such n-i-p junctions can be used in different electron and optoelectronic devices.
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