4.6 Article

Spin Aharonov-Bohm effect and topological spin transistor

Journal

PHYSICAL REVIEW B
Volume 82, Issue 19, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.195409

Keywords

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Funding

  1. National Science and Engineering Research Council (NSERC) of Canada
  2. Fonds quebecois de la recherche sur la nature et les technologies (FQRNT)
  3. Stanford Graduate Program (SGF)
  4. Nanoscale Science and Engineering Initiative of the National Science Foundation [EEC-0646547]
  5. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
  6. Division Of Materials Research
  7. Direct For Mathematical & Physical Scien [0955822] Funding Source: National Science Foundation

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Ever since its discovery, the electron spin has only been measured or manipulated through the application of an electromagnetic force acting on the associated magnetic moment. In this work, we propose a spin Aharonov-Bohm effect in which the electron spin is controlled by a magnetic flux while no electromagnetic field is acting on the electron. Such a nonlocal spin manipulation is realized in an Aharonov-Bohm ring made from the recently discovered quantum spin Hall insulator, by taking advantage of the defining property of the quantum spin Hall edge states: the one-to-one correspondence between spin polarization and direction of propagation. The proposed setup can be used to realize a new spintronics device, the topological spin transistor, in which the spin rotation is completely controlled by a magnetic flux of hc/2e, independently of the details of the sample.

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