Related references
Note: Only part of the references are listed.Electronic properties of zircon and hafnon from many-body perturbation theory
R. Shaltaf et al.
PHYSICAL REVIEW B (2009)
Localized and Itinerant States in Lanthanide Oxides United by GW @ LDA plus U
Hong Jiang et al.
PHYSICAL REVIEW LETTERS (2009)
Effects of Y doping on the structural stability and defect properties of cubic HfO2
G. H. Chen et al.
JOURNAL OF APPLIED PHYSICS (2008)
Exciting prospects for solids: Exact-exchange based functionals meet quasiparticle energy calculations
Patrick Rinke et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2008)
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Patrick Rinke et al.
PHYSICAL REVIEW B (2008)
Band offsets of ultrathin high-κ oxide films with Si
Eric Bersch et al.
PHYSICAL REVIEW B (2008)
Ab initio finite-temperature excitons
Andrea Marini
PHYSICAL REVIEW LETTERS (2008)
Influence of the core-valence interaction and of the pseudopotential approximation on the electron self-energy in semiconductors
Ricardo Gomez-Abal et al.
PHYSICAL REVIEW LETTERS (2008)
Understanding correlations in vanadium dioxide from first principles
Matteo Gatti et al.
PHYSICAL REVIEW LETTERS (2007)
Accurate quasiparticle spectra from self-consistent GW calculations with vertex corrections
M. Shishkin et al.
PHYSICAL REVIEW LETTERS (2007)
Vertex corrections in localized and extended systems
Andrew J. Morris et al.
PHYSICAL REVIEW B (2007)
Quasiparticle self-consistent GW method applied to localized 4f electron systems
Athanasios N. Chantis et al.
PHYSICAL REVIEW B (2007)
Self-consistent GW calculations for semiconductors and insulators
M. Shishkin et al.
PHYSICAL REVIEW B (2007)
Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations
T. V. Perevalov et al.
JOURNAL OF APPLIED PHYSICS (2007)
Crystal structure and band gap determination of HfO2 thin films
Marie C. Cheynet et al.
JOURNAL OF APPLIED PHYSICS (2007)
Oxygen vacancy in monoclinic HfO2:: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments
Peter Broqvist et al.
APPLIED PHYSICS LETTERS (2006)
Spectroscopic ellipsometry characterization of ZrO2 thin films by nitrogen-assisted reactive magnetron sputtering
L. Q. Zhu et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2006)
Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
J. L. Gavartin et al.
APPLIED PHYSICS LETTERS (2006)
High dielectric constant gate oxides for metal oxide Si transistors
J Robertson
REPORTS ON PROGRESS IN PHYSICS (2006)
Band gaps and defect levels in functional oxides
J Robertson et al.
THIN SOLID FILMS (2006)
First-principles study of C6B2 and related compounds
Kazuaki Kobayashi et al.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2006)
Electronic structure differences in ZrO2 vs HfO2
WJ Zheng et al.
JOURNAL OF PHYSICAL CHEMISTRY A (2005)
Optical band gaps and composition dependence of hafnium-aluminate thin films grown by atomic layer chemical vapor deposition
NV Nguyen et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2005)
Defect energy levels in HfO2 high-dielectric-constant gate oxide -: art. no. 183505
K Xiong et al.
APPLIED PHYSICS LETTERS (2005)
Low-temperature polymorphs of ZrO2 and HfO2:: A density-functional theory study -: art. no. 144107
JE Jaffe et al.
PHYSICAL REVIEW B (2005)
Combining GW calculations with exact-exchange density-functional theory:: an analysis of valence-band photoemission for compound semiconductors -: art. no. 126
P Rinke et al.
NEW JOURNAL OF PHYSICS (2005)
Many-body perturbation theory using the density-functional concept:: Beyond the GW approximation -: art. no. 186402
F Bruneval et al.
PHYSICAL REVIEW LETTERS (2005)
Similarities in photoluminescence in hafnia and zirconia induced by ultraviolet photons
T Ito et al.
JOURNAL OF APPLIED PHYSICS (2005)
Dielectric properties of crystalline and amorphous transition metal oxides and silicates as potential high-κ candidates:: the contribution of density-functional theory
GM Rignanese
JOURNAL OF PHYSICS-CONDENSED MATTER (2005)
Electronic structure of IIB-VI semiconductors in the GW approximation
A Fleszar et al.
PHYSICAL REVIEW B (2005)
Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex oxides
G Lucovsky et al.
MICROELECTRONIC ENGINEERING (2004)
First-principles approach to the electron-phonon interaction
R van Leeuwen
PHYSICAL REVIEW B (2004)
Effect of semicore orbitals on the electronic band gaps of Si, Ge, and GaAs within the GW approximation
ML Tiago et al.
PHYSICAL REVIEW B (2004)
Valence band structure and band alignment at the ZrO2/Si interface
R Puthenkovilakam et al.
APPLIED PHYSICS LETTERS (2004)
All-electron self-consistent GW approximation:: Application to Si, MnO, and NiO -: art. no. 126406
SV Faleev et al.
PHYSICAL REVIEW LETTERS (2004)
First-principles investigation of high-κ dielectrics:: Comparison between the silicates and oxides of hafnium and zirconium (vol B 69, art no 184301, 2004) -: art. no. 099903
GM Rignanese et al.
PHYSICAL REVIEW B (2004)
An accurate determination of barrier heights at the HfO2/Si interfaces
R Puthenkovilakam et al.
JOURNAL OF APPLIED PHYSICS (2004)
Crystallization in hafnia- and zirconia-based systems
SV Ushakov et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2004)
Valence and conduction band offsets of a ZrO2/SiOxNy,/n-Si CMOS gate stack:: A combined photoemission and inverse photoemission study
S Sayan et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2004)
Band alignment issues related to HfO2/SiO2/p-Si gate stacks
S Sayan et al.
JOURNAL OF APPLIED PHYSICS (2004)
High dielectric constant oxides
J Robertson
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS (2004)
Chemistry and band offsets of HfO2 thin films on Si revealed by photoelectron spectroscopy and x-ray absorption spectroscopy
S Toyoda et al.
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA (2004)
Electronic structure and electron energy-loss spectroscopy of ZrO2 zirconia -: art. no. 245116
LK Dash et al.
PHYSICAL REVIEW B (2004)
Optical characterization of HfO2 thin films grown by atomic layer deposition
J Aarik et al.
THIN SOLID FILMS (2004)
First-principles investigation of high-κ dielectrics:: Comparison between the silicates and oxides of hafnium and zirconium -: art. no. 184301
GM Rignanese et al.
PHYSICAL REVIEW B (2004)
Electronic structure analysis of Zr silicate and Hf silicate films by using spatially resolved valence electron energy-loss spectroscopy
N Ikarashi et al.
JOURNAL OF APPLIED PHYSICS (2003)
Electron energy-loss spectroscopy study of thin film hafnium aluminates for novel gate dielectrics
S Stemmer et al.
JOURNAL OF MICROSCOPY-OXFORD (2003)
Electronic structure and dielectric properties of cubic zirconia
S Kobayashi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2003)
Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics
WJ Zhu et al.
IEEE ELECTRON DEVICE LETTERS (2002)
Band offsets and Schottky barrier heights of high dielectric constant oxides
PW Peacock et al.
JOURNAL OF APPLIED PHYSICS (2002)
Band-gap problem in semiconductors revisited: Effects of core states and many-body self-consistency
W Ku et al.
PHYSICAL REVIEW LETTERS (2002)
Internal photoemission of electrons and holes from (100)Si into HfO2
VV Afanas'ev et al.
APPLIED PHYSICS LETTERS (2002)
Electronic structure calculations of solids using the WIEN2k package for material sciences
K Schwarz et al.
COMPUTER PHYSICS COMMUNICATIONS (2002)
Energy gap and band alignment for (HfO2)x(Al2O3)1-x on (100) Si
HY Yu et al.
APPLIED PHYSICS LETTERS (2002)
Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
H Nohira et al.
JOURNAL OF NON-CRYSTALLINE SOLIDS (2002)
Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry
SG Lim et al.
JOURNAL OF APPLIED PHYSICS (2002)
Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
M Gutowski et al.
APPLIED PHYSICS LETTERS (2002)
Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties
YJ Cho et al.
APPLIED PHYSICS LETTERS (2002)
Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
A Callegari et al.
JOURNAL OF APPLIED PHYSICS (2001)
Photoemission study of energy-band alignments and gap-state density distributions for high-k dielectrics
S Miyazaki et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2001)
Pseudopotential study of PrO2 and HfO2 in fluorite phase
J Dabrowski et al.
MICROELECTRONICS RELIABILITY (2001)
High-κ gate dielectrics:: Current status and materials properties considerations
GD Wilk et al.
JOURNAL OF APPLIED PHYSICS (2001)
Share Paper
