Journal
PHYSICAL REVIEW B
Volume 82, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.125203
Keywords
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Funding
- National Science Foundation [DMR-0606406, DMR-0604549, DMR-1006835]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0000957]
- Science Foundation Ireland
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1006835] Funding Source: National Science Foundation
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We have investigated the N composition, x, and temperature, T, dependence of the electron effective mass, m*, of GaAs1-xNx films with sufficiently low carrier concentration that carriers are expected to be confined to near the bottom of the conduction-band edge (CBE). Using Seebeck and Hall measurements, in conjunction with assumptions of parabolic bands and Fermi-Dirac statistics, we find a nonmonotonic dependence of m* on x and an increasing T dependence of m* with x. These trends are not predicted by the two-state band anticrossing model but instead are consistent with the predictions of the linear combination of resonant nitrogen states model, which takes into account several N-related states and their interaction with the GaAs CBE.
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