Magnetically induced ferroelectricity in Cu2MnSnS4 and Cu2MnSnSe4

We investigate magnetically induced ferroelectricity in Cu2MnSnS4 by means of Landau theory of phase transitions and of ab initio density-functional theory. As expected from the Landau approach, ab initio calculations show that a nonzero ferroelectric polarization P along the y direction (on the order of a tenth of mu C/cm(2)) is induced by the peculiar antiferromagnetic (AFM) configuration of Mn spins occurring in Cu2MnSnS4, clearly shows that ferroelectricity is mainly driven by Heisenberg-exchange terms and only to a minor extent by relativistic terms. At variance with previous examples of collinear antiferromagnets with magnetically induced ferroelectricity (such as AFM-E HoMnO3), the ionic displacements occurring upon magnetic ordering are very small, so that the exchange-striction mechanism (i.e., displacement of ions so as to minimize the magnetic-coupling energy) is not effective here. Rather, the microscopic mechanism at the basis of polarization has mostly an electronic origin. In this framework, we propose the small magnetic moment at Cu sites induced by neighboring Mn magnetic moments to play a relevant role in inducing P. Finally, we investigate the effect of the anion by comparing Cu2MnSnS4 and Cu2MnSnS4: Se 4p states, more delocalized compared to S 3p states, are able to better mediate the Mn-Mn interaction, in turn leading to a higher ferroelectric polarization in the Se-based compound.