Journal
PHYSICAL REVIEW B
Volume 82, Issue 5, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.054420
Keywords
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Funding
- Ministry of Education, Science and Technology [2010-0000123]
- Seoul RBD Program [ST090777]
- National Science Foundation [DMR06-03762]
- National Research Foundation of Korea [2010-0017423]
- Basic Research Program [2010-0000594]
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We report the observation of the giant magnetoresistance effect in semiconductor-based GaMnAs/GaAs:Be multilayers. Clear transitions between low-field-high-resistance and high-field-low-resistance states are observed in selected samples with Be-doped nonmagnetic spacers. These samples also show negative coercive fields in their magnetic hysteresis and antiferromagnetic (AFM) splittings in polarized neutron reflectivity. Our data indicate that the AFM interlayer exchange couplings in this system occur over much longer periods than predicted by current theories, strongly suggesting that the coupling in III-V semiconductor-based magnetic multilayers is significantly longer ranged than in metallic systems.
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