Journal
PHYSICAL REVIEW B
Volume 82, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.041402
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Funding
- Swiss National Science Foundation (SNSF) [200021-120347]
- Italian MIUR [2007FW3MJX]
- Swiss National Science Foundation (SNF) [200021_120347] Funding Source: Swiss National Science Foundation (SNF)
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Recent infrared measurements of phonon peaks in gated bilayer graphene reveal two striking signatures of electron-phonon interaction: an asymmetric Fano lineshape and a giant variation in the peak intensity as a function of the applied gate voltage. In this Rapid Communication we provide a unified theoretical framework which accounts for both these effects and unveils the occurrence of a switching mechanism between symmetric (E-g) and antisymmetric (E-u) phonon modes as dominant channel in the optical response. A complete phase diagram of the optical phonon response is also presented, as a function of both the charge density and the band gap.
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