Quasifreestanding multilayer graphene films on the carbon face of SiC

The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB stacking. The band structure of quasifreestanding AB bilayers is directly compared with bilayer graphene grown on the Si face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly free standing from an electronic point of view due to the rotations between graphene layers.