Related references
Note: Only part of the references are listed.A comparative analysis of deep level emission in ZnO layers deposited by various methods
Cheol Hyoun Ahn et al.
JOURNAL OF APPLIED PHYSICS (2009)
Yellow luminescence in ZnO layers grown on sapphire
M. A. Reshchikov et al.
JOURNAL OF APPLIED PHYSICS (2008)
EPR and optical study of oxygen and zinc vacancies in electron-irradiated ZnO
L. A. Kappers et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2008)
Vacancy clustering and acceptor activation in nitrogen-implanted ZnO
Thomas Moe Borseth et al.
PHYSICAL REVIEW B (2008)
Mechanisms of electrical isolation in O+-irradiated ZnO
A. Zubiaga et al.
PHYSICAL REVIEW B (2008)
Defect energetics in ZnO: A hybrid Hartree-Fock density functional study
Fumiyasu Oba et al.
PHYSICAL REVIEW B (2008)
Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs
Stephan Lany et al.
PHYSICAL REVIEW B (2008)
Native point defects in ZnO
Anderson Janotti et al.
PHYSICAL REVIEW B (2007)
Nature of native defects in ZnO
F. A. Selim et al.
PHYSICAL REVIEW LETTERS (2007)
Compensating point defects in 4He+-irradiated InN
F. Tuomisto et al.
PHYSICAL REVIEW B (2007)
CASINO V2.42 - A fast and easy-to-use modeling tool for scanning electron microscopy and microanalysis users
Dominique Drouin et al.
SCANNING (2007)
Defect distribution in a-plane GaN on Al2O3
F. Tuomisto et al.
APPLIED PHYSICS LETTERS (2007)
Dominant effect of near-interface native point defects on ZnO Schottky barriers
L. J. Brillson et al.
APPLIED PHYSICS LETTERS (2007)
Identification of oxygen and zinc vacancy optical signals in ZnO
T. Moe Borseth et al.
APPLIED PHYSICS LETTERS (2006)
Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO
T. Moe Borseth et al.
PHYSICAL REVIEW B (2006)
Progress in ZnO materials and devices
David C. Look
JOURNAL OF ELECTRONIC MATERIALS (2006)
First-principles study of intrinsic point defects in ZnO: Role of band structure, volume relaxation, and finite-size effects
Paul Erhart et al.
PHYSICAL REVIEW B (2006)
Evidence for native-defect donors in n-type ZnO -: art. no. 225502
DC Look et al.
PHYSICAL REVIEW LETTERS (2005)
Deep-level emissions influenced by O and Zn implantations in ZnO
QX Zhao et al.
APPLIED PHYSICS LETTERS (2005)
Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy
YW Heo et al.
JOURNAL OF APPLIED PHYSICS (2005)
A comprehensive review of ZnO materials and devices -: art. no. 041301
U Ozgür et al.
JOURNAL OF APPLIED PHYSICS (2005)
Recent progress in processing and properties of ZnO
SJ Pearton et al.
PROGRESS IN MATERIALS SCIENCE (2005)
Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam
ZQ Chen et al.
PHYSICAL REVIEW B (2005)
Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO -: art. no. 205502
F Tuomisto et al.
PHYSICAL REVIEW LETTERS (2003)
Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films
LJ Brillson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2001)
Depth profiling of ZnO thin films by cathodoluminescence
HC Ong et al.
APPLIED PHYSICS LETTERS (2001)
Recent advances in ZnO materials and devices
DC Look
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2001)
Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO -: art. no. 075205
SB Zhang et al.
PHYSICAL REVIEW B (2001)
First-principles study of native point defects in ZnO
AF Kohan et al.
PHYSICAL REVIEW B (2000)