Journal
PHYSICAL REVIEW B
Volume 81, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.081201
Keywords
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Funding
- National Science Foundation [DMR-0513968]
- Norwegian Research Council
- Academy of Finland
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0803276] Funding Source: National Science Foundation
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We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation.
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