4.6 Article

Sub-band-gap photoconductivity in Co2+-doped ZnO

Journal

PHYSICAL REVIEW B
Volume 81, Issue 12, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.125206

Keywords

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Funding

  1. U.S. National Science Foundation [CHE 0628252-CRC]
  2. Sloan Foundation
  3. Dreyfus Foundation
  4. Research Corporation
  5. Department of Energy's Office of Biological and Environmental Research located at Pacific Northwest National Laboratory
  6. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Materials Science and Engineering Physics

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Variable-temperature and polarized scanning photoconductivity measurements on Zn1-xCoxO epitaxial films allow description of sub-band-gap Co2+-derived photoionization excited states in this archetypal diluted magnetic oxide. Low-temperature (27 K) measurements demonstrate spontaneous ionization from the photogenerated T-4(1)(P) d-d excited state, despite the highly localized nature of this excitation. Ionization involves relaxation from this d-d state to the lower Co2+/3+ donor-type photoionization level. Variable-temperature photoconductivity measurements reveal an additional thermally assisted ionization process that enhances the d-d photoconductivity at higher temperatures. The energy barrier to thermal ionization from the T-4(1)(P) excited state at low temperatures is estimated to be E-a approximate to 43 meV.

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