Journal
PHYSICAL REVIEW B
Volume 82, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.245310
Keywords
-
Funding
- National Research Foundation of Korea (NRF) [2009-0093823]
- Center for Nanostructured Materials Technology under Ministry of Education, Science and Technology
Ask authors/readers for more resources
The Shubnikov de Haas effect is used to determine the electron and hole mobilities in a bismuth nanowire. We identify an excess hole density from a doping effect introduced during the on-film-formation-of-nanowires fabrication process. Three electron subbands and a single hole band contribute to the oscillatory magnetoresistance and these bands can be decomposed by fast Fourier transform analysis of rho(xx) into different orbits on an anisotropic Fermi surface. A nonharmonic Shubnikov de Haas oscillation from the hole band is due to variation in the carrier density with applied magnetic field. Electron and hole scattering is dominated by a short-range potential with a hole mobility of 5000 cm(2) V-1 s(-1) and an electron mobility of 20 000 cm(2) V-1 s(-1) at 1.6 K. Mobility analysis of the fast Fourier transform of rho(xx) is used to determine the individual three electron and single hole subband mobilities.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available