Journal
PHYSICAL REVIEW B
Volume 82, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.125109
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We discuss the photovoltaic effect at a p-n heterojunction, in which the illuminated side is a doped Mott insulator, using the simplest description of a Mott insulator within the Hubbard model. We find that the energy efficiency of such a device, if we choose an appropriate narrow-gap Mott insulator, can be significantly enhanced due to impact ionization caused by the photoexcited hot electron-hole pairs. Namely, the photoexcited electron and/or hole can convert its excess energy beyond the Mott-Hubbard gap to additional electrical energy by creating multiple electron-hole pairs in a time scale which can be shorter than the time characterizing other relaxation processes.
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