Journal
PHYSICAL REVIEW B
Volume 81, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.241301
Keywords
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Funding
- National Science Foundation MRSEC [DMR-0520471]
- CNAM
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While evidence of a topologically nontrivial surface state has been identified in surface-sensitive measurements of Bi2Se3, a significant experimental concern is that no signatures have been observed in bulk transport. In a search for such states, nominally undoped single crystals of Bi2Se3 with carrier densities approaching 10(16) cm(-3) and very high mobilities exceeding 2 m(2) V-1 s(-1) have been studied. A comprehensive analysis of Shubnikov-de Haas oscillations, Hall effect, and optical reflectivity indicates that the measured electrical transport can be attributed solely to bulk states, even at 50 mK at low Landau-level filling factor, and in the quantum limit. The absence of a significant surface contribution to bulk conduction demonstrates that even in very clean samples, the surface mobility is lower than that of the bulk, despite its topological protection.
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