4.6 Article

Hydrogen doping in indium oxide: An ab initio study

Journal

PHYSICAL REVIEW B
Volume 80, Issue 19, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.193202

Keywords

ab initio calculations; density functional theory; electrical conductivity; hydrogen; indium compounds; interstitials; semiconductor materials

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First-principles density-functional theory is employed to investigate the role of hydrogen impurities in In2O3. We find that both interstitial hydrogen (H-i) and substitutional hydrogen (H-O) act as shallow donors. Our results support recent experiments by Koida [Jpn. J. Appl. Phys. 46, L685 (2007)], which found hydrogen-doped In2O3 to be a good candidate for transparent conducting films.

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