Journal
PHYSICAL REVIEW B
Volume 79, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.073101
Keywords
lanthanum compounds; metal-semiconductor-metal structures; niobium; Schottky barriers; strontium compounds
Funding
- TEPCO Research Foundation
- Scientific Research on Priority Areas
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In order to investigate the interface termination dependence of perovskite band alignments, we have studied the Schottky barrier height at La0.7Sr0.3MnO3/Nb:SrTiO3 (001) heterointerfaces. As the Nb:SrTiO3 semiconductor was varied from TiO2 termination to SrO termination by variable insertion of a SrMnO3 layer, a large systematic increase in the Schottky barrier height was observed. This can be ascribed to the evolution of the interface dipole induced to screen the polar discontinuity at the interface, which gives a large internal degree of freedom for tuning band diagrams in oxides.
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