Journal
PHYSICAL REVIEW B
Volume 80, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.045401
Keywords
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Funding
- U. S. Department of Energy [DE-FG0208ER46512]
- FCT [SFRH/BPD/27182/2006, PTDC/FIS/64404/2006]
- Fundação para a Ciência e a Tecnologia [SFRH/BPD/27182/2006] Funding Source: FCT
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We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we observe that strain can generate a bulk spectral gap. However, this gap is critical, requiring threshold deformations in excess of 20% and only along preferred directions with respect to the underlying lattice. The gapless Dirac spectrum is robust for small and moderate deformations and the gap appears as a consequence of the merging of the two inequivalent Dirac points only under considerable deformations of the lattice. We discuss how strain-induced anisotropy and local deformations can be used as a means to affect transport characteristics and pinch off current flow in graphene devices.
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