Journal
PHYSICAL REVIEW B
Volume 79, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.075322
Keywords
band model of magnetism; carrier density; electron spin polarisation; indium compounds; localised states; magnetoresistance; narrow band gap semiconductors; Nyquist criterion; semiconductor thin films
Funding
- NSF [DMR-0618235]
- MARTECH, Florida State University
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The spin and phase coherence times of the itinerant electrons in n-InSb thin films were experimentally determined by analyzing the low-temperature magnetoresistance in antilocalization theory. The results indicate a very weak temperature dependence below 10 K for the spin coherence time. The dependence of the spin coherence time on carrier density demonstrates that the Elliott-Yafet mechanism is predominantly responsible for electron-spin relaxation in n-type InSb at low temperatures. The phase coherence time follows an inverse temperature dependence, in accordance with the electron-electron Nyquist dephasing mechanism.
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