4.6 Article

Graphene growth by metal etching on Ru(0001)

Journal

PHYSICAL REVIEW B
Volume 80, Issue 23, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.235422

Keywords

density functional theory; edge dislocations; electron microscopy; etching; graphene; island structure; ruthenium; scanning tunnelling microscopy

Funding

  1. U. S. DOE [DE-AC04-94AL85000, DE-AC02-05CH11231]

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Low-energy electron microscopy reveals a mode of graphene growth on Ru(0001) in which Ru atoms are etched from a step edge and injected under a growing graphene sheet. Based on density-functional calculations, we propose a model wherein injected Ru atoms form metastable islands under the graphene. Scanning tunneling microscopy reveals that dislocation networks exist near step edges, consistent with some of the injected atoms being incorporated into the topmost Ru layer, thereby increasing its density.

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