Journal
PHYSICAL REVIEW B
Volume 80, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.115323
Keywords
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Funding
- U. S. Department of Energy, Office of Basic Energy Sciences [DE-FG02-03ER46028, DE-FG02-03ER46027]
- Air Force Office of Scientific Research [FA9950-06-1-0472]
- NSF/MRSEC [DMR-0520527]
- NSF [DMR-0537588]
- Thai government
- NDSEG
- Chinese Scholarship Council
- NSFC [10674163]
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The flexibility of single-crystal Si nanomembranes allows strain to be applied elastically without introducing dislocations in the fabrication process, resulting in uniform strain. It is also relatively easier to apply different types and orientations of strain to Si using elastic-strain sharing than by the traditional graded-strained-layer approach. We use X-ray absorption spectroscopy to measure the effect of uniform biaxial strain on several features of the conduction band structure of Si with (001) and (110) orientations. By also measuring the Si 2p photoelectric threshold, we are able to determine the absolute positions of features of the Si conduction band and their change with strain.
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