Journal
PHYSICAL REVIEW B
Volume 80, Issue 22, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.220507
Keywords
ballistic transport; critical currents; Doppler shift; III-V semiconductors; indium compounds; Josephson effect; metal-insulator boundaries; niobium; semiconductor quantum wells
Funding
- DFG [STR 438-2, GRK 638]
- MPI-PKS
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We study narrow ballistic Josephson weak links in a InAs quantum wells contacted by Nb electrodes and find a dramatic magnetic-field suppression of the Andreev reflection amplitude, which occurs even for in-plane field orientation with essentially no magnetic flux through the junction. Our observations demonstrate the presence of a Doppler shift in the energy of the Andreev levels, which results from diamagnetic screening currents in the hybrid Nb/InAs banks. The data for conductance, excess, and critical currents can be consistently explained in terms of the sample geometry and the McMillan energy, characterizing the transparency of the Nb/InAs interface.
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