4.6 Article

Electronic structure and magnetism in BaMn2As2 and BaMn2Sb2

Journal

PHYSICAL REVIEW B
Volume 79, Issue 7, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.075120

Keywords

antiferromagnetic materials; barium compounds; density functional theory; energy gap; ground states; magnetic moments; magnetic semiconductors; magnetic structure; manganese compounds; thermoelectric power

Funding

  1. Department of Energy

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We study the properties of ThCr2Si2 structure BaMn2As2 and BaMn2Sb2 using density functional calculations of the electronic and magnetic properties as well as experimental measurements on single crystal samples of BaMn2As2. These materials are local moment magnets with moderate band gap antiferromagnetic semiconducting ground states. The electronic structures show substantial Mn-pnictogen hybridization, which stabilizes an intermediate spin configuration for the nominally d(5) Mn. The results are discussed in the context of possible thermoelectric applications and the relationship with the corresponding iron/cobalt/nickel compounds Ba(Fe,Co,Ni)(2)As-2.

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