Journal
PHYSICAL REVIEW B
Volume 79, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.155207
Keywords
electrical conductivity; exchange interactions (electron); ferromagnetic materials; gallium arsenide; magnetic semiconductors; magnetoresistance; manganese compounds; quantum interference phenomena; weak localisation
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We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn concentrations above 1% quantum interference corrections lead to negative magnetoresistance, i.e., to weak localization (WL) rather than weak antilocalization (WAL). Our work highlights key qualitative differences between (Ga,Mn)As and previously studied toy-model systems and pinpoints the mechanism by which exchange splitting in the ferromagnetic state converts valence-band WAL into WL. We comment on recent experimental studies and theoretical analyses of low-temperature magnetoresistance in (Ga,Mn)As which have been variously interpreted as implying both WL and WAL and as requiring an impurity-band interpretation of transport in metallic (Ga,Mn)As.
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