Journal
PHYSICAL REVIEW B
Volume 79, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.035203
Keywords
band structure; cadmium compounds; defect states; electrical conductivity; II-VI semiconductors; impurities; semiconductor materials; surface states
Funding
- Engineering and Physical Sciences Research Council (U.K.)
- Spanish Government [EP/E010210/1, EP/G004447/1, EP/E025722/1, MAT2007-66129]
- EPSRC [EP/G004447/1, EP/E010210/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G004447/1, EP/E010210/1] Funding Source: researchfish
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In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in n-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.
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