Journal
PHYSICAL REVIEW B
Volume 80, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.125422
Keywords
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Funding
- Ministry of Education, Science and Technology (MEST) [R01-2008-000-10685-0, KRF-2008-314-C00111, R11-2008-053-01002-0, R31-2008-000-10057-0]
- Seoul City Government
- Nano R D program [2008-03670]
- National Research Laboratory Fund through Nano Optical Property Laboratory
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The intensity ratio between two major Raman bands in graphene is one of the most important pieces of information for physics of graphene and has been believed to represent various intrinsic properties of graphene without critical assessment of extrinsic effects. We report a micro-Raman spectroscopy study on the Raman intensity ratio of the 2D band to the G Raman band of graphene varying the thickness of dielectric layers (SiO2) underneath it. The ratio is shown to change by almost 370% when the thickness is varied by 60%. The large variation in the ratio is well explained by theoretical calculations considering multiple Raman scattering events at the interfaces. Our analysis shows that the interference effect is critical in extracting the intrinsic 2D to G intensity ratio and therefore must be taken into account in extracting various physical properties of graphene from Raman measurements.
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