Related references
Note: Only part of the references are listed.High resolution electron microscopy of GaAs capped GaSb nanostructures
S. I. Molina et al.
APPLIED PHYSICS LETTERS (2009)
1.55 μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer
H. Y. Liu et al.
APPLIED PHYSICS LETTERS (2008)
Continuous wave single mode operation of GaInAsSb/GaSb quantum well lasers emitting beyond 3 μm
T. Lehnhardt et al.
APPLIED PHYSICS LETTERS (2008)
Influence of InGaAs cap layers with different In concentration on the properties of InGaAs quantum dots
D. Litvinov et al.
JOURNAL OF APPLIED PHYSICS (2008)
Low-strain InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetector
R. V. Shenoi et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2008)
Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures
V. V. Mamutin et al.
NANOTECHNOLOGY (2008)
Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure
P. S. Wong et al.
NANOTECHNOLOGY (2008)
Incorporation of sb in InAs/GaAs quantum dots
S. I. Molina et al.
APPLIED PHYSICS LETTERS (2007)
Localization of defects in InAs QD symmetric InGaAs/GaAs DWELL structures
J. L. Casas Espinola et al.
PHYSICA B-CONDENSED MATTER (2007)
InAs-coverage dependence of self-assembled quantum dot size, composition, and density
A. Zolotaryov et al.
APPLIED PHYSICS LETTERS (2007)
Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer
C. Y. Jin et al.
APPLIED PHYSICS LETTERS (2007)
Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping
J. M. Ripalda et al.
APPLIED PHYSICS LETTERS (2007)
Growth and carrier dynamics in type II band alignment GaInAsSb/GaSb quantum well structure
Tadataka Edamura et al.
THIN SOLID FILMS (2007)
Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer
J. M. Ulloa et al.
APPLIED PHYSICS LETTERS (2007)
Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots
J. M. Ulloa et al.
JOURNAL OF APPLIED PHYSICS (2007)
Energy gaps and lattice dynamic properties of InAsxSb1-x
M. Boucenna et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2007)
Molecular beam epitaxial growth of high power quantum dot super-luminecent diodes
Sumon K. Ray et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2007)
MBE growth of self-assembled InGaAs quantum dots aligned along quasi-periodic multi-atomic steps on a vicinal (111)B GaAs surface
Y. Akiyama et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix
Alexey Semenov et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Interfacial structure, bonding and composition of InAs and GaSb thin films determined using coherent Bragg rod analysis
C. N. Cionca et al.
PHYSICAL REVIEW B (2007)
Optimized Tersoff potential parameters for tetrahedrally bonded III-V semiconductors
D. Powell et al.
PHYSICAL REVIEW B (2007)
Comparative study of InAs quantum dots with different InGaAs capping methods
C. H. Lin et al.
APPLIED PHYSICS LETTERS (2007)
Photoluminescence beyond 1.5 μm from InAs quantum dots
J. S. Ng et al.
MICROELECTRONICS JOURNAL (2006)
Elastic constants and acoustical phonon properties of GaAsxSb1-x
Nadir Bouarissa
MATERIALS CHEMISTRY AND PHYSICS (2006)
Investigation of carrier dynamics on InAs quantum dots embedded in InGaAs/GaAs quantum wells based on time-resolved pump and probe differential photoluminescence
Xiaodong Mu et al.
APPLIED PHYSICS LETTERS (2006)
Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in InxGa1-xAs
D. Litvinov et al.
PHYSICAL REVIEW B (2006)
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
Y. H. Jiao et al.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2006)
Intermixing of InGaAs quantum dots grown by cycled monolayer deposition
H. S. Djie et al.
JOURNAL OF APPLIED PHYSICS (2006)
High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers
A. Salhi et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2006)
1.5 μm emission from InAs quantum dots with InGaAsSb strain-reducing layer grown on GaAs substrates
K Akahane et al.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2006)
Room-temperature 1.6 μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer
HY Liu et al.
JOURNAL OF APPLIED PHYSICS (2006)
Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb -: art. no. 202108
JM Ripalda et al.
APPLIED PHYSICS LETTERS (2005)
Quantum dots-in-a-well infrared photodetectors
S Krishna
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2005)
Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GraAs DWELL quantum
M Gutiérrez et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
MJ da Silva et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer
HY Liu et al.
APPLIED PHYSICS LETTERS (2005)
The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)
Y Sun et al.
JOURNAL OF APPLIED PHYSICS (2005)
Capping process of InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy
Q Gong et al.
APPLIED PHYSICS LETTERS (2004)
Temperature dependence of the photoluminescence emission from InAs quantum dots in a strained Ga0.85In0.15As quantum well
DP Popescu et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2004)
GaInAs/GaAs quantum-well growth assisted by Sb surfactant:: Toward 1.3 μm emission
JC Harmand et al.
APPLIED PHYSICS LETTERS (2004)
Intermixing and lateral composition modulation in GaAs/GaSb short period superlattices
C Dorin et al.
JOURNAL OF APPLIED PHYSICS (2003)
InAs/GaAs-(001) quantum dots close to thermodynamic equilibrium
G Costantini et al.
APPLIED PHYSICS LETTERS (2003)
InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy
VM Ustinov et al.
JOURNAL OF CRYSTAL GROWTH (2003)
Ga/In-intermixing and segregation during InAs quantum dot formation
C Heyn et al.
JOURNAL OF CRYSTAL GROWTH (2003)
Segregation of indium in InGaAs/GaAs quantum wells grown by vapor-phase epitaxy
YN Drozdov et al.
SEMICONDUCTORS (2003)
Role of two- and three-dimensional surface structures in InAs-GaAs(001) quantum dot nucleation
TJ Krzyzewski et al.
PHYSICAL REVIEW B (2002)
Atomistic simulation of strain relaxation in InxGa1-xAs/GaAs quantum dots with nonuniform composition -: art. no. 115316
MA Migliorato et al.
PHYSICAL REVIEW B (2002)
Closely stacked InAs/GaAs quantum dots grown at low growth rate
H Heidemeyer et al.
APPLIED PHYSICS LETTERS (2002)
Investigation of In segregation in InAs/AlAs quantum-well structures
M Schowalter et al.
APPLIED PHYSICS LETTERS (2001)
Effects of interfacial atomic segregation on optical properties of InAs/GaSb superlattices
R Magri et al.
PHYSICAL REVIEW B (2001)
Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy
M Moran et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2001)
Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition
J Tatebayashi et al.
APPLIED PHYSICS LETTERS (2001)
Wavelength control from 1.25 to 1.4 μm in InxGa1-xAs quantum dot structures grown by metal organic chemical vapor deposition
A Passaseo et al.
APPLIED PHYSICS LETTERS (2001)
Indium segregation kinetics in InGaAs ternary compounds
SY Karpov et al.
THIN SOLID FILMS (2000)
Laser-induced InAs/GaAs quantum dot intermixing
JJ Dubowski et al.
APPLIED PHYSICS LETTERS (2000)
Origin of antimony segregation in GaInSb/InAs strained-layer superlattices
J Steinshnider et al.
PHYSICAL REVIEW LETTERS (2000)
Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots
N Perret et al.
PHYSICAL REVIEW B (2000)
Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots
HY Liu et al.
JOURNAL OF CRYSTAL GROWTH (2000)