Journal
PHYSICAL REVIEW B
Volume 79, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.205209
Keywords
giant magnetoresistance; III-V semiconductors; magnetic semiconductors; paramagnetic materials; p-n heterojunctions; spin polarised transport
Funding
- AFOSR [FA9550-07-1-0381]
- MRSEC [DMR-0520513]
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The giant magnetoresistance characteristics of magnetic III-V semiconductor p-n heterojunctions are described. The origin of the extremely large positive magnetoresistance (2680%) observed at room temperature and at a field of 18 T is attributed to efficient spin-polarized carrier transport. The magnetocurrent ratio of the junction saturates with magnetic field. The field dependence of the magnetoresistance points to the existence of a paramagnetic component, which determines the degree of spin polarization of the junction current. This work indicates that highly spin-polarized magnetic semiconductor heterojunction devices that operate at room temperature can be realized.
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